CPC H10N 70/253 (2023.02) [G11C 13/0002 (2013.01); H10B 63/30 (2023.02); H10N 70/023 (2023.02); H10N 70/24 (2023.02); H10N 70/823 (2023.02); H10N 70/841 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); G06N 3/049 (2013.01); G06N 3/065 (2023.01); G06N 3/088 (2013.01)] | 31 Claims |
1. A memtransistor, comprising:
a polycrystalline monolayer film formed of an atomically thin material, wherein the polycrystalline monolayer film contains grains defining a plurality of grain boundaries thereof; and
an electrode array formed on the polycrystalline monolayer film, wherein the electrode array has a plurality of electrodes electrically coupled with the polycrystalline monolayer film such that each pair of electrodes defines a channel in the polycrystalline monolayer film therebetween;
a photoresist layer formed between the polycrystalline monolayer film and the electrode array; and
a gate electrode capacitively coupled with the channel.
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