US 11,889,775 B2
Multi-terminal memtransistors and applications of the same
Vinod K. Sangwan, Evanston, IL (US); Hong-Sub Lee, Evanston, IL (US); and Mark C. Hersam, Wilmette, IL (US)
Assigned to NORTHWESTERN UNIVERSITY, Evanston, IL (US)
Appl. No. 16/770,662
Filed by NORTHWESTERN UNIVERSITY, Evanston, IL (US)
PCT Filed Dec. 17, 2018, PCT No. PCT/US2018/065929
§ 371(c)(1), (2) Date Jun. 8, 2020,
PCT Pub. No. WO2019/125994, PCT Pub. Date Jun. 27, 2019.
Claims priority of provisional application 62/599,946, filed on Dec. 18, 2017.
Prior Publication US 2021/0175419 A1, Jun. 10, 2021
Int. Cl. H10N 70/20 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); G06N 3/049 (2023.01); G06N 3/088 (2023.01); G06N 3/065 (2023.01)
CPC H10N 70/253 (2023.02) [G11C 13/0002 (2013.01); H10B 63/30 (2023.02); H10N 70/023 (2023.02); H10N 70/24 (2023.02); H10N 70/823 (2023.02); H10N 70/841 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); G06N 3/049 (2013.01); G06N 3/065 (2023.01); G06N 3/088 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A memtransistor, comprising:
a polycrystalline monolayer film formed of an atomically thin material, wherein the polycrystalline monolayer film contains grains defining a plurality of grain boundaries thereof; and
an electrode array formed on the polycrystalline monolayer film, wherein the electrode array has a plurality of electrodes electrically coupled with the polycrystalline monolayer film such that each pair of electrodes defines a channel in the polycrystalline monolayer film therebetween;
a photoresist layer formed between the polycrystalline monolayer film and the electrode array; and
a gate electrode capacitively coupled with the channel.