CPC H10N 70/063 (2023.02) [H10B 63/24 (2023.02); H10B 63/80 (2023.02); H10N 70/231 (2023.02); H10N 70/882 (2023.02)] | 19 Claims |
1. A method of manufacturing a memory device, the method comprising:
forming a memory stack in a recess of an insulative material by—
forming a metallization layer in the recess;
depositing a selector layer in the recess over the metallization layer;
depositing a memory cell layer over the selector layer; and
etching the memory stack to define a plurality of memory elements.
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