CPC H10K 71/166 (2023.02) [C23C 14/042 (2013.01); C23C 14/24 (2013.01); H10K 71/00 (2023.02); H10K 71/164 (2023.02); H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02)] | 12 Claims |
1. An evaporation method, comprising:
performing a first evaporation on a base substrate by using a first mask to form a first evaporation sub-pattern on the base substrate, wherein the first mask has a first opening area; and
performing a second evaporation on the base substrate by using a second mask to form a second evaporation sub-pattern on the base substrate, wherein the second mask has a second opening area;
wherein a combination of the first and second evaporation sub-patterns forms an evaporation pattern;
wherein the first and second evaporation sub-patterns constitute complementary patterns; and
wherein the first and second evaporation sub-patterns are able to form an evaporation layer having an isolated hollow pattern.
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