US 11,889,739 B2
OLED with electron transport layer within insulating layer
Feng Wei, Shenzhen (CN); and Aiguo Tu, Shenzhen (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
Appl. No. 16/622,920
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
PCT Filed Nov. 8, 2019, PCT No. PCT/CN2019/116525
§ 371(c)(1), (2) Date Dec. 16, 2019,
PCT Pub. No. WO2021/082048, PCT Pub. Date May 6, 2021.
Claims priority of application No. 201911032281.8 (CN), filed on Oct. 28, 2019.
Prior Publication US 2022/0416217 A1, Dec. 29, 2022
Int. Cl. H01L 51/56 (2006.01); H01L 51/50 (2006.01); H01L 27/32 (2006.01); H10K 71/00 (2023.01); H10K 50/15 (2023.01); H10K 50/18 (2023.01); H10K 59/122 (2023.01); H10K 59/173 (2023.01); H10K 102/00 (2023.01)
CPC H10K 71/00 (2023.02) [H10K 50/15 (2023.02); H10K 50/18 (2023.02); H10K 59/122 (2023.02); H10K 59/173 (2023.02); H10K 2102/351 (2023.02)] 9 Claims
OG exemplary drawing
 
1. An organic light-emitting diode (OLED) device, comprising:
a light-emitting layer;
an insulating layer disposed on one side of the light-emitting layer, a through hole extending through the insulating layer, wherein the through hole is arranged corresponding to a middle portion of the light-emitting layer, and a material of the insulating layer comprises a hole transporting material or an electron blocking material;
an electron transport layer disposed within a lower portion of the through hole and attached to an upper surface of the light-emitting layer; and
an electron injection layer disposed in an upper portion of the through hole and attached to one side of the electron transport layer away from the light-emitting layer.