US 11,889,702 B2
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
Alan Kalitsov, San Jose, CA (US); Derek Stewart, Livermore, CA (US); and Bhagwati Prasad, San Jose, CA (US)
Assigned to WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed by WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed on Jun. 7, 2021, as Appl. No. 17/341,090.
Prior Publication US 2022/0392953 A1, Dec. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); H10B 61/00 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetoelectric memory device, comprising:
a first electrode;
a second electrode;
a magnetic tunnel junction located between the first electrode and the second electrode, the magnetic tunnel junction comprising, along a direction from the first electrode toward the second electrode, a first reference layer, a nonmagnetic tunnel barrier layer, a first nonmagnetic metal dust layer, a free layer including a first component free layer and a second component free layer that are spaced from each other by a second nonmagnetic metal dust layer; and
a dielectric capping layer located between the magnetic tunnel junction and the second electrode.