US 11,889,701 B2
Memory cell including polarization retention member(s) including antiferroelectric layer over ferroelectric layer
Tarek Ali, Dresden (DE); Konstantin H. J. Mertens, Dresden (DE); Maximilian W. Lederer, Dresden (DE); David J. Lehninger, Dresden (DE); and Konrad Seidel, Dresden (DE)
Assigned to GlobalFoundries U.S. Inc., Santa Clara, CA (US)
Filed by GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG, Dresden (DE)
Filed on Apr. 22, 2021, as Appl. No. 17/237,886.
Prior Publication US 2022/0344359 A1, Oct. 27, 2022
Int. Cl. H01L 21/00 (2006.01); H10B 53/30 (2023.01); H01L 49/02 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H10B 51/30 (2023.01)
CPC H10B 53/30 (2023.02) [H01L 28/60 (2013.01); H01L 29/516 (2013.01); H01L 29/78391 (2014.09); H10B 51/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory cell, comprising:
a capacitor structure including:
a first electrode;
at least a pair of polarization retention members over the first electrode, each polarization retention member including an antiferroelectric layer over and in contact with a ferroelectric layer; and
a first metal electrode over and in contact with an uppermost one of the antiferroelectric layer.