CPC H10B 53/30 (2023.02) [H01L 28/60 (2013.01); H01L 29/516 (2013.01); H01L 29/78391 (2014.09); H10B 51/30 (2023.02)] | 20 Claims |
1. A memory cell, comprising:
a capacitor structure including:
a first electrode;
at least a pair of polarization retention members over the first electrode, each polarization retention member including an antiferroelectric layer over and in contact with a ferroelectric layer; and
a first metal electrode over and in contact with an uppermost one of the antiferroelectric layer.
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