US 11,889,680 B2
Integrated assemblies and methods of forming integrated assemblies
David K. Hwang, Boise, ID (US); Richard J. Hill, Boise, ID (US); and Gurtej S. Sandhu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 14, 2021, as Appl. No. 17/376,077.
Claims priority of provisional application 63/072,033, filed on Aug. 28, 2020.
Prior Publication US 2022/0068932 A1, Mar. 3, 2022
Int. Cl. H10B 12/00 (2023.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01)
CPC H10B 12/315 (2023.02) [H01L 29/0684 (2013.01); H01L 29/42356 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H10B 12/0335 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02)] 44 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
two-dimensional-material configured as an upwardly-opening container-shape; the container-shape having a first sidewall region, a second sidewall region, and a bottom region extending from the first sidewall region to the second sidewall region; each of the first and second sidewall regions include a lower source/drain region, an upper source/drain region, and a channel region between the upper and lower source/drain regions;
a first insulative material adjacent the first sidewall region and on an opposing side of the first sidewall region from an interior region of the container shape;
a second insulative material adjacent the second sidewall region and on an opposing side of the second sidewall region from the interior region of the container shape;
a first gating structure adjacent to the first insulative material and operatively proximate the channel region of the first sidewall region; a first transistor comprising the first sidewall region, the first insulative material and the first gating structure; and
a second gating structure adjacent to the second insulative material and operatively proximate the channel region of the second sidewall region; a second transistor comprising the second sidewall region, the second insulative material and the second gating structure.