US 11,889,282 B2
MEMS device
Euan James Boyd, Eb (GB); Scott Lyall Cargill, Eb (GB); and Yannick Pierre Kervran, Hk (FR)
Assigned to AAC Acoustic Technologies (Shenzhen) Co., Ltd., Shenzhen (CN)
Filed by AAC ACOUSTIC TECHNOLOGIES (SHENZHEN) CO., LTD., Shenzhen (CN)
Filed on May 27, 2022, as Appl. No. 17/826,184.
Prior Publication US 2023/0388711 A1, Nov. 30, 2023
Int. Cl. H04R 7/06 (2006.01); H04R 7/18 (2006.01); B81B 3/00 (2006.01); H04R 19/04 (2006.01)
CPC H04R 7/06 (2013.01) [B81B 3/0021 (2013.01); H04R 7/18 (2013.01); H04R 19/04 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/019 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/04 (2013.01); B81B 2207/07 (2013.01); H04R 2201/003 (2013.01); H04R 2410/03 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A micro electro mechanical system (MEMS) device, comprising:
a substrate having a back cavity passing through the substrate;
a diaphragm connected to the substrate and covers the back cavity, wherein the diaphragm comprises a first membrane and a second membrane arranged opposite to each other, and an accommodating space is formed between the first membrane and the second membrane;
a plurality of supports arranged in the accommodating space, and opposite ends of each of the plurality of supports are respectively connected to the first membrane and the second membrane; and
a counter electrode arranged in the accommodating space and spaced apart from the first membrane and the second membrane,
wherein a plurality of ventilation slots are provided on the diaphragm along a circumferential direction thereof and are annularly spaced from each other, the plurality of ventilation slots successively penetrate through the first membrane, the supports and the second membrane,
the first membrane and the second membrane each comprises a first region and a second region, the first region extends from a center of the diaphragm toward an edge of the diaphragm and does not extend to the ventilation slots,
the first region is an electrode region, the second region is located at a circumferential outer side of the first region, and
the second region is formed by a semiconductor material without doping conductive ions, and the first region is formed by doping conductive ions in the semiconductor material.