US 11,889,215 B2
Light detector
Tatsuya Kabe, Osaka (JP); Hideyuki Arai, Osaka (JP); Hisashi Aikawa, Osaka (JP); Yuki Sugiura, Osaka (JP); Akito Inoue, Osaka (JP); Mitsuyoshi Mori, Kyoto (JP); Kentaro Nakanishi, Nara (JP); and Yusuke Sakata, Osaka (JP)
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka (JP)
Filed by Panasonic Intellectual Property Management Co., Ltd., Osaka (JP)
Filed on Sep. 27, 2021, as Appl. No. 17/486,495.
Application 17/486,495 is a continuation of application No. PCT/JP2020/010235, filed on Mar. 10, 2020.
Claims priority of application No. 2019-063298 (JP), filed on Mar. 28, 2019.
Prior Publication US 2022/0014701 A1, Jan. 13, 2022
Int. Cl. H04N 25/75 (2023.01); H01L 27/146 (2006.01); H04N 25/766 (2023.01)
CPC H04N 25/75 (2023.01) [H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H04N 25/766 (2023.01)] 21 Claims
OG exemplary drawing
 
1. A light detector in which a light receiving portion having one or more avalanche photodiodes and a peripheral circuit portion exchanging a signal with the light receiving portion are provided on a first principal surface of a first conductive type semiconductor substrate, comprising at least:
a back electrode provided on a second principal surface of the semiconductor substrate facing the first principal surface and configured to apply a predetermined voltage to the semiconductor substrate; and
a first conductive type first separation portion provided between the light receiving portion and the peripheral circuit portion with a predetermined interval from each of the light receiving portion and the peripheral circuit portion in a direction parallel with the first principal surface,
wherein each avalanche photodiode has at least
a second conductive type first region provided to extend inward of the semiconductor substrate from the first principal surface, and
a first conductive type second region provided in contact with the first region in a direction crossing the first principal surface, and
the peripheral circuit portion has at least
a first conductive type first well provided to extend inward of the semiconductor substrate from the first principal surface,
a first transistor provided at the first well, and
a second conductive type third well provided to surround side and bottom portions of the first well.