US 11,888,078 B2
Light detection with semiconductor photodiodes
Massimo Cataldo Mazzillo, Hamburg (DE); Tim Boescke, Regensburg (DE); and Wolfgang Zinkl, Tegernheim (DE)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Appl. No. 17/790,523
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Jan. 8, 2021, PCT No. PCT/EP2021/050236
§ 371(c)(1), (2) Date Jul. 1, 2022,
PCT Pub. No. WO2021/140177, PCT Pub. Date Jul. 15, 2021.
Claims priority of application No. 10 2020 200 189.8 (DE), filed on Jan. 9, 2020.
Prior Publication US 2022/0406954 A1, Dec. 22, 2022
Int. Cl. H01L 31/107 (2006.01); H01L 31/109 (2006.01); H01L 31/118 (2006.01)
CPC H01L 31/1075 (2013.01) [H01L 31/109 (2013.01); H01L 31/1185 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor photodiode comprising:
a top side with an active surface area for light entry into the photodiode;
a bottom side opposite to the top side;
a bulk structure comprising a single semiconductor material, the bulk structure comprising:
a p+-type layer and an n-type layer, which together form the p-n junction of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer and the other one is a lower p-n junction layer, wherein the upper p-n junction layer is located proximate to the active surface area;
an n-type enrichment layer and a p-type guard ring, wherein the guard ring runs along the circumference of the p+-type layer and is embedded in the n-type layer, and wherein the n-type enrichment layer is located below the p+-type layer, in direct surface contact with the p+-type layer and embedded in the n-type layer; and
a semiconductor light absorption layer;
wherein:
the semiconductor light absorption layer defines the active surface area;
the semiconductor light absorption layer is arranged on top of the bulk structure, above the upper p-n junction layer;
the semiconductor light absorption layer comprises a different semiconductor material from the semiconductor material of the bulk structure; and
a precursor layer is arranged between the bulk structure and the semiconductor light absorption layer, wherein the semiconductor light absorption layer is in direct contact with on the precursor layer.