CPC H01L 31/1075 (2013.01) [H01L 31/109 (2013.01); H01L 31/1185 (2013.01)] | 17 Claims |
1. A semiconductor photodiode comprising:
a top side with an active surface area for light entry into the photodiode;
a bottom side opposite to the top side;
a bulk structure comprising a single semiconductor material, the bulk structure comprising:
a p+-type layer and an n-type layer, which together form the p-n junction of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer and the other one is a lower p-n junction layer, wherein the upper p-n junction layer is located proximate to the active surface area;
an n-type enrichment layer and a p-type guard ring, wherein the guard ring runs along the circumference of the p+-type layer and is embedded in the n-type layer, and wherein the n-type enrichment layer is located below the p+-type layer, in direct surface contact with the p+-type layer and embedded in the n-type layer; and
a semiconductor light absorption layer;
wherein:
the semiconductor light absorption layer defines the active surface area;
the semiconductor light absorption layer is arranged on top of the bulk structure, above the upper p-n junction layer;
the semiconductor light absorption layer comprises a different semiconductor material from the semiconductor material of the bulk structure; and
a precursor layer is arranged between the bulk structure and the semiconductor light absorption layer, wherein the semiconductor light absorption layer is in direct contact with on the precursor layer.
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