US 11,888,067 B2
B-site doped perovskite layers and semiconductor device incorporating same
Ramesh Ramamoorthy, Moraga, CA (US); Sasikanth Manipatruni, Portland, OR (US); and Gaurav Thareja, Santa Clara, CA (US)
Assigned to Kepler Computing Inc., San Francisco, CA (US)
Filed by Kepler Computing Inc., San Francisco, CA (US)
Filed on Mar. 10, 2023, as Appl. No. 18/181,922.
Application 17/819,601 is a division of application No. 17/528,054, filed on Nov. 16, 2021, granted, now 11,417,768, issued on Aug. 16, 2022.
Application 18/181,922 is a continuation of application No. 17/819,601, filed on Aug. 12, 2022, granted, now 11,757,043.
Application 17/528,054 is a continuation of application No. 17/305,301, filed on Jul. 2, 2021, granted, now 11,349,031, issued on May 31, 2022.
Application 17/305,301 is a continuation of application No. 16/842,593, filed on Apr. 7, 2020, granted, now 11,164,976, issued on Nov. 2, 2021.
Claims priority of provisional application 62/831,044, filed on Apr. 8, 2019.
Prior Publication US 2023/0215953 A1, Jul. 6, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/74 (2006.01); H01L 29/737 (2006.01); H01L 49/02 (2006.01); H10B 53/30 (2023.01); H10B 12/00 (2023.01)
CPC H01L 29/78618 (2013.01) [H01L 28/56 (2013.01); H01L 28/57 (2013.01); H01L 28/60 (2013.01); H01L 28/65 (2013.01); H01L 29/2003 (2013.01); H01L 29/6684 (2013.01); H01L 29/7375 (2013.01); H01L 29/7408 (2013.01); H01L 29/7869 (2013.01); H10B 53/30 (2023.02); H10B 12/312 (2023.02); H10B 12/36 (2023.02)] 30 Claims
OG exemplary drawing
 
1. An integrated circuit device, comprising:
a capacitor comprising a ferroelectric or paraelectric oxide having a perovskite crystal structure between first and second electrodes;
the perovskite crystal structure comprising:
corner sites occupied by at least base corner elements comprising one or both of Ba and Bi, and
center sites interchangeably occupied by one or more base center elements and one or more dopant center elements comprising at least manganese (Mn); and
a vertical diffusion barrier comprising a refractory metal or an intermetallic compound disposed over one or both of the first and second electrodes.