CPC H01L 29/78618 (2013.01) [H01L 28/56 (2013.01); H01L 28/57 (2013.01); H01L 28/60 (2013.01); H01L 28/65 (2013.01); H01L 29/2003 (2013.01); H01L 29/6684 (2013.01); H01L 29/7375 (2013.01); H01L 29/7408 (2013.01); H01L 29/7869 (2013.01); H10B 53/30 (2023.02); H10B 12/312 (2023.02); H10B 12/36 (2023.02)] | 30 Claims |
1. An integrated circuit device, comprising:
a capacitor comprising a ferroelectric or paraelectric oxide having a perovskite crystal structure between first and second electrodes;
the perovskite crystal structure comprising:
corner sites occupied by at least base corner elements comprising one or both of Ba and Bi, and
center sites interchangeably occupied by one or more base center elements and one or more dopant center elements comprising at least manganese (Mn); and
a vertical diffusion barrier comprising a refractory metal or an intermetallic compound disposed over one or both of the first and second electrodes.
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