US 11,888,060 B2
Power MOSFET with improved safe operating area
Prasad Venkatraman, Gilbert, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Sep. 1, 2021, as Appl. No. 17/446,672.
Prior Publication US 2023/0065659 A1, Mar. 2, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/7813 (2013.01) [H01L 29/1095 (2013.01); H01L 29/42368 (2013.01); H01L 29/66712 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A MOSFET device die, comprising:
an active area including a first active area portion and a second active area portion formed on a semiconductor substrate; and
at least one mesa formed in the semiconductor substrate extending in a longitudinal direction through the active area, the at least one mesa including a channel region extending in a longitudinal direction, the channel region including low threshold voltage channel portions and high threshold voltage channel portions,
the first active area portion including the channel portions in a first ratio of low threshold voltage channel portions to high threshold voltage channel portions, and
the second active area portion including channel portions in a second ratio of low threshold voltage channel portions to high threshold voltage channel portions,
wherein the first ratio is larger than the second ratio.