US 11,888,059 B2
Field effect transistor including gradually varying composition channel
Injun Hwang, Yongin-si (KR); Jongseob Kim, Seoul (KR); Joonyong Kim, Seoul (KR); Younghwan Park, Suwon-si (KR); Junhyuk Park, Pohang-si (KR); Dongchul Shin, Suwon-si (KR); Jaejoon Oh, Seongnam-si (KR); Soogine Chong, Seoul (KR); and Sunkyu Hwang, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 16, 2021, as Appl. No. 17/349,327.
Application 17/349,327 is a continuation of application No. 16/703,128, filed on Dec. 4, 2019, granted, now 11,069,802.
Claims priority of application No. 10-2019-0068262 (KR), filed on Jun. 10, 2019.
Prior Publication US 2021/0313465 A1, Oct. 7, 2021
Int. Cl. H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/7813 (2013.01) [H01L 29/086 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/0886 (2013.01); H01L 29/1033 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/1095 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/7803 (2013.01); H01L 29/7831 (2013.01)] 36 Claims
OG exemplary drawing
 
1. A field effect transistor (FET) comprising:
a drain region;
a drift region on the drain region;
a channel region on the drift region, the channel region being undoped or doped; and
a source region on the channel region;
wherein the channel region has a gradually varying composition in a direction from the drain region toward the source region such that an intensity of a polarization in the channel region gradually varies in the direction from the drain region toward the source region.