US 11,888,054 B2
Semiconductor device and method for manufacturing the same
Ronghui Hao, Suzhou (CN); Fu Chen, Suzhou (CN); Chuan He, Suzhou (CN); and King Yuen Wong, Suzhou (CN)
Assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Filed by Innoscience (Suzhou) Technology Co., Ltd., Suzhou (CN)
Filed on Jan. 8, 2021, as Appl. No. 17/144,176.
Application 17/144,176 is a continuation of application No. 17/258,462, previously published as PCT/CN2020/137491, filed on Dec. 18, 2020.
Prior Publication US 2022/0199788 A1, Jun. 23, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/207 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/205 (2006.01); H01L 29/45 (2006.01)
CPC H01L 29/7787 (2013.01) [H01L 29/0646 (2013.01); H01L 29/0649 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/401 (2013.01); H01L 29/41766 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/205 (2013.01); H01L 29/452 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A nitride-based semiconductor device, comprising:
a substrate;
a buffer disposed over the substrate;
a first nitride-based semiconductor layer disposed over the buffer;
a shield layer disposed between the buffer and the first nitride-based semiconductor layer and comprising a first isolation compound that has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, wherein the first isolation compound is made of at least one two-dimensional material which comprises at least one metal element;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer; and
a pair of source/drain (S/D) electrodes and a gate electrode disposed over the second nitride-based semiconductor layer, wherein the gate electrode is present between the S/D electrodes, and vertical projections of the S/D electrodes and the gate electrode on the buffer are entirely within a vertical projection of the shield layer on the buffer.