US 11,888,047 B2
Lateral transistors and methods with low-voltage-drop shunt to body diode
Mohamed N. Darwish, Campbell, CA (US); Jun Zeng, Torrance, CA (US); and Richard A. Blanchard, Los Altos, CA (US)
Assigned to MaxPower Semiconductor, Inc., San Jose, CA (US)
Filed by MaxPower Semiconductor Inc., San Jose, CA (US)
Filed on Jul. 20, 2020, as Appl. No. 16/933,890.
Application 15/975,284 is a division of application No. 14/694,929, filed on Apr. 23, 2015, granted, now 9,997,614, issued on Jun. 28, 2018.
Application 16/933,890 is a continuation of application No. 15/975,284, filed on May 9, 2018, granted, now 10,720,510.
Application 14/694,929 is a continuation of application No. 13/758,703, filed on Feb. 4, 2013, granted, now 9,048,118, issued on Jun. 2, 2015.
Claims priority of provisional application 61/597,979, filed on Feb. 13, 2012.
Prior Publication US 2021/0175348 A1, Jun. 10, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01); H01L 21/8234 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01)
CPC H01L 29/66734 (2013.01) [H01L 21/26506 (2013.01); H01L 21/823412 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/0878 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/66727 (2013.01); H01L 29/7395 (2013.01); H01L 29/7803 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/7831 (2013.01); H01L 29/7835 (2013.01); H01L 29/0847 (2013.01); H01L 29/42368 (2013.01); H01L 29/66666 (2013.01)] 19 Claims
OG exemplary drawing
 
5. A power semiconductor device, comprising:
a first and a second laterally-gated transistor both having a portion of a first-conductivity-type source region, a gate electrode which is capacitively coupled to a body region to selectably form a lateral channel therein, a first-conductivity-type drain extension region connecting said lateral channel to a common drain electrode, a vertically-extended source extension region connecting said source region to a common source electrode on the backside of the device, and a shorting strap connecting said source region to said vertically-extended source extension region;
wherein both said gate electrodes are electrically separate portions of a single thin film layer;
wherein the threshold voltage of said first laterally-gated transistor is less than the threshold voltage of said second laterally-gated transistor; and
wherein said first laterally-gated transistor has a width which is smaller than a width of said second laterally-gated transistor.