US 11,888,038 B2
Integrated circuit devices and methods of manufacturing the same
Joonyoung Choi, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 29, 2021, as Appl. No. 17/488,825.
Claims priority of application No. 10-2020-0130442 (KR), filed on Oct. 8, 2020.
Prior Publication US 2022/0115504 A1, Apr. 14, 2022
Int. Cl. H01L 29/40 (2006.01)
CPC H01L 29/408 (2013.01) 19 Claims
OG exemplary drawing
 
1. An integrated circuit device, comprising:
a substrate having an active area therein;
a bit line on the substrate;
a direct contact, which extends between the active area and the bit line and electrically couples the bit line to a portion of the active area;
an electrically insulating spacer structure extending on sidewalls of the bit line and on sidewalls of the direct contact; and
a semi-insulating field passivation layer extending between the sidewalls of the direct contact and the spacer structure;
wherein the spacer structure and the field passivation layer comprise different materials; and
wherein the field passivation layer directly contacts the sidewalls of the direct contact such that a hetero-interface is defined therebetween, said hetero-interface including a quantum well, which extends within the field passivation layer and is configured to enhance a charge density within the direct contact.