US 11,888,030 B2
Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
John Wood, Wellingborough (GB); Alireza Mojab, Austin, TX (US); Daniel Brdar, Driftwood, TX (US); and Ruiyang Yu, Austin, TX (US)
Assigned to IDEAL POWER INC., Austin, TX (US)
Filed by IDEAL POWER INC., Austin, TX (US)
Filed on Nov. 9, 2022, as Appl. No. 18/053,839.
Application 18/053,839 is a continuation of application No. 17/537,726, filed on Nov. 30, 2021, granted, now 11,522,051.
Claims priority of provisional application 63/123,704, filed on Dec. 10, 2020.
Prior Publication US 2023/0066664 A1, Mar. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/10 (2006.01); H03K 17/082 (2006.01); H01L 29/747 (2006.01); H01L 29/732 (2006.01)
CPC H01L 29/1004 (2013.01) [H01L 29/732 (2013.01); H01L 29/747 (2013.01); H03K 17/0826 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating a power module having a bi-directional double-base bipolar junction transistor, the method comprising:
conducting a first load current from an upper terminal of the power module, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal
interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead of the transistor to the lower terminal; and
blocking current from the upper terminal to the lower terminal by the transistor.