US 11,888,028 B2
Semiconductor device having a liner layer and method of fabricating the same
Jinbum Kim, Seoul (KR); Dahye Kim, Seoul (KR); Seokhoon Kim, Suwon-si (KR); Jaemun Kim, Seoul (KR); Ilgyou Shin, Seoul (KR); Haejun Yu, Osan-si (KR); Kyungin Choi, Seoul (KR); Kihyun Hwang, Seongnam-si (KR); Sangmoon Lee, Suwon-si (KR); Seung Hun Lee, Hwaseong-si (KR); and Keun Hwi Cho, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 12, 2022, as Appl. No. 17/862,453.
Application 17/862,453 is a continuation of application No. 17/128,153, filed on Dec. 20, 2020, granted, now 11,417,731.
Claims priority of application No. 10-2020-0062026 (KR), filed on May 25, 2020.
Prior Publication US 2022/0344469 A1, Oct. 27, 2022
Int. Cl. H01L 29/08 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/161 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01)
CPC H01L 29/0847 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 27/092 (2013.01); H01L 29/165 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an active pattern on a substrate;
a pair of source/drain patterns on the active pattern;
a channel pattern interposed between the pair of source/drain patterns, the channel pattern including semiconductor patterns, which are stacked to be spaced apart from each other;
a gate electrode crossing the channel pattern, the gate electrode including a first portion in a space between adjacent ones of the semiconductor patterns; and
a liner layer provided in the space and interposed between the first portion and the adjacent ones of the semiconductor patterns,
wherein the liner layer comprises a same semiconductor material as the semiconductor patterns, and
wherein the liner layer is interposed between the first portion and one of the pair of source/drain patterns to contact a side surface of the one of the pair of source/drain patterns.