US 11,888,026 B2
Integrated circuit device
Minhee Choi, Suwon-si (KR); Seojin Jeong, Incheon (KR); Seokhoon Kim, Suwon-si (KR); Jungtaek Kim, Yongin-si (KR); Pankwi Park, Incheon (KR); Moonseung Yang, Hwaseong-si (KR); and Ryong Ha, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 7, 2021, as Appl. No. 17/467,944.
Claims priority of application No. 10-2020-0173677 (KR), filed on Dec. 11, 2020.
Prior Publication US 2022/0190109 A1, Jun. 16, 2022
Int. Cl. H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/0665 (2013.01) [H01L 29/6656 (2013.01); H01L 29/78618 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
a fin-type active region on a substrate and extending in a first horizontal direction;
at least one nanosheet separated from a fin top of the fin-type active region in a vertical direction and having a bottom surface facing the fin top of the fin-type active region;
a gate line on the fin-type active region, surrounding the at least one nanosheet, and extending in a second horizontal direction that is different from the first horizontal direction; and
a source/drain region on the fin-type active region, adjacent to the gate line, and in contact with the at least one nanosheet,
wherein the source/drain region includes a lower main body layer and an upper main body layer, the lower and upper main body layers being sequentially stacked on the fin-type active region in the vertical direction,
wherein a top surface of the lower main body layer includes a lower facet declining toward the substrate as it extends in a direction from the at least one nanosheet to a center of the source/drain region,
wherein the upper main body layer includes a bottom surface contacting the lower facet of the top surface of the lower main body layer, and a top surface having an upper facet,
wherein with respect to a vertical cross section, the lower facet extends along a first line, the upper facet extends along a second line, and
wherein the first line and the second line intersect each other.