US 11,888,019 B2
Ferroelectric devices
Mikhail A. Treger, Boise, ID (US); and Albert Liao, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 17, 2020, as Appl. No. 17/125,826.
Prior Publication US 2022/0199757 A1, Jun. 23, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 49/02 (2006.01); H10B 53/30 (2023.01); H10B 53/40 (2023.01)
CPC H01L 28/60 (2013.01) [H10B 53/30 (2023.02); H10B 53/40 (2023.02)] 28 Claims
OG exemplary drawing
 
1. A ferroelectric device comprising a ferroelectric insulative material consisting of one or members of the group consisting of a non-iron, non-hafnium transition metal oxide, zirconium, zirconium oxide, niobium, and niobium oxide, and one or more members of the group consisting of ZnSiO, ZnO and ZnSi, wherein the zinc is present at a concentration of less than or equal to 15 at %.