US 11,888,006 B2
Imaging device, manufacturing method thereof, and electronic apparatus
Yuki Miyanami, Kanagawa (JP); and Atsushi Okuyama, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 16/972,657
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jun. 13, 2019, PCT No. PCT/JP2019/023429
§ 371(c)(1), (2) Date Dec. 7, 2020,
PCT Pub. No. WO2019/240207, PCT Pub. Date Dec. 19, 2019.
Claims priority of application No. 2018-114537 (JP), filed on Jun. 15, 2018; and application No. 2019-108072 (JP), filed on Jun. 10, 2019.
Prior Publication US 2021/0249456 A1, Aug. 12, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14623 (2013.01) [H01L 27/1463 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An imaging device comprising:
a Si {111} substrate having a first direction as a thickness direction and including a first crystal plane represented by a plane index {111} extending along a horizontal plane orthogonal to the first direction;
a photoelectric conversion section provided in the Si {111} substrate;
a first conductivity type region provided in the Si {111} substrate; and
a light-shielding section including a horizontal light-shielding part and a vertical light-shielding part, the horizontal light-shielding part positioned between the photoelectric conversion section and the first conductivity type region in the first direction and extending along the horizontal plane, the vertical light-shielding part being orthogonal to the horizontal light-shielding part;
the horizontal light-shielding part comprising an insulating material including:
a first plane formed along the first crystal plane of the Si {111} substrate orthogonal to the first direction, and
a second plane formed along a second crystal plane of the Si {111} substrate being inclined relative to the first direction and represented by the plane index {111}.