CPC H01L 27/0262 (2013.01) [H01L 27/0259 (2013.01); H01L 27/067 (2013.01); H01L 27/0722 (2013.01)] | 20 Claims |
1. An apparatus comprising:
a semiconductor layer of a first conductivity type;
a lateral bipolar device disposed in the semiconductor layer; and
an isolation trench disposed in the semiconductor layer in a base region of the lateral bipolar device, the isolation trench being disposed between an emitter implant of the lateral bipolar device and a collector implant of the lateral bipolar device, the emitter implant and the collector implant being of a second conductivity type, opposite the first conductivity type, the isolation trench having a depth in the semiconductor layer that is greater than a depth of the emitter implant in the semiconductor layer, and greater than a depth of the collector implant in the semiconductor layer, wherein the isolation trench is not disposed between the emitter implant and a base implant disposed in the semiconductor layer.
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