US 11,887,981 B2
Lateral surge protection devices
Yupeng Chen, San Jose, CA (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Oct. 1, 2020, as Appl. No. 16/948,817.
Claims priority of provisional application 62/924,651, filed on Oct. 22, 2019.
Prior Publication US 2021/0118870 A1, Apr. 22, 2021
Int. Cl. H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 27/07 (2006.01)
CPC H01L 27/0262 (2013.01) [H01L 27/0259 (2013.01); H01L 27/067 (2013.01); H01L 27/0722 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a semiconductor layer of a first conductivity type;
a lateral bipolar device disposed in the semiconductor layer; and
an isolation trench disposed in the semiconductor layer in a base region of the lateral bipolar device, the isolation trench being disposed between an emitter implant of the lateral bipolar device and a collector implant of the lateral bipolar device, the emitter implant and the collector implant being of a second conductivity type, opposite the first conductivity type, the isolation trench having a depth in the semiconductor layer that is greater than a depth of the emitter implant in the semiconductor layer, and greater than a depth of the collector implant in the semiconductor layer, wherein the isolation trench is not disposed between the emitter implant and a base implant disposed in the semiconductor layer.