US 11,887,955 B2
Semiconductor die including stress-resistant bonding structures and methods of forming the same
Hui-Min Huang, Taoyuan (TW); Ming-Da Cheng, Taoyuan (TW); Chang-Jung Hsueh, Taipei (TW); Wei-Hung Lin, Xinfeng Township (TW); Kai Jun Zhan, Taoyuan (TW); and Wan-Yu Chiang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Aug. 26, 2021, as Appl. No. 17/412,551.
Prior Publication US 2023/0065797 A1, Mar. 2, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/13 (2013.01) [H01L 23/5226 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 2224/02181 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/11622 (2013.01); H01L 2224/13018 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor die comprising:
dielectric material layers embedding metal interconnect structures;
a connection pad-and-via structure located on a first side of the dielectric material layers, wherein the connection pad-and-via structure comprises a connection via portion that vertically extending through a pad-level dielectric material layer and contacting one of the metal interconnect structures and a pad portion contacting a horizontal surface of the pad-level dielectric material layer;
a bump-level dielectric material layer overlying the connection pad-and-via structure; and
a bump structure located on the bump-level dielectric material layer and comprising a bump via portion extending through the bump-level dielectric material layer and contacting the pad portion, wherein an entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of the pad portion of the connection pad-and-via structure, wherein a lateral distance between opposing segments of an outer sidewall of the connection via portion is greater than twice a thickness of the pad portion of the connection pad-and-via structure.