US 11,887,938 B2
Semiconductor device assemblies with conductive underfill dams for grounding EMI shields and methods for making the same
Jungbae Lee, Taichung (TW)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 28, 2022, as Appl. No. 17/732,276.
Application 17/732,276 is a continuation of application No. 16/897,867, filed on Jun. 10, 2020, granted, now 11,342,277.
Prior Publication US 2022/0254732 A1, Aug. 11, 2022
Int. Cl. H01L 23/552 (2006.01); H01L 21/56 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/563 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of making semiconductor device assemblies, comprising:
providing a substrate including an upper surface having a plurality of internal contact pads and a plurality of grounding pads and a lower surface having a plurality of external contact pads;
forming a plurality of conductive underfill dams over the upper surface of the substrate, each in electrical contact with a corresponding one of the plurality of grounding pads;
disposing a plurality of semiconductor dies over and in electrical contact with corresponding ones of the plurality of internal contact pads;
dispensing an underfill material at least between each of the plurality of semiconductor dies and the substrate, the underfill material including a fillet between each of the plurality of semiconductor dies and corresponding ones of the plurality of conductive underfill dams wherein the fillet includes a surface extending between and contacting an external sidewall of the plurality of semiconductor dies to intersect and an internal sidewall of the plurality of conductive underfill dams;
forming a plurality of conductive EMI shields, each EMI shield over a corresponding semiconductor die, a corresponding fillet, and a corresponding conductive underfill dam, each EMI shield being conformal with the surface of the corresponding fillet; and
singulating the substrate to separate into a plurality of the semiconductor device assemblies.