US 11,887,920 B2
Redistribution layers including reinforcement structures and related semiconductor device packages, systems and methods
Hyunsuk Chun, Boise, ID (US); Chan H. Yoo, Boise, ID (US); and Tracy N. Tennant, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 19, 2020, as Appl. No. 16/952,703.
Application 16/952,703 is a continuation of application No. 16/106,791, filed on Aug. 21, 2018, granted, now 10,861,782.
Prior Publication US 2021/0074623 A1, Mar. 11, 2021
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/49838 (2013.01) [H01L 21/4857 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/562 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A redistribution layer (RDL) structure, comprising:
at least one level of conductive traces between adjacent levels of low-k dielectric material; and
a reinforcement structure comprising first beams extending parallel to and inward of a periphery of the RDL structure, each of the first beams having a first length, and second beams extending perpendicular to the periphery, each of the second beams having a second length, the second length equal to, or greater than, the first length, each of the second beams connected to two of the first beams, the reinforcement structure comprised of a conductive material, the reinforcement structure electrically isolated from the at least one level of conductive traces and extending between a first major surface and a second major surface of the RDL structure;
wherein the first beams and the second beams define a square-wave pattern when viewed from the first major surface.