US 11,887,917 B2
Encapsulated vertical interconnects for high-speed applications and methods of assembling same
Bok Eng Cheah, Bukit Gambir (MY); Jackson Chung Peng Kong, Tanjung Tokong (MY); Kooi Chi Ooi, Glugor (MY); and Yang Liang Poh, Penang (MY)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Mar. 31, 2021, as Appl. No. 17/218,384.
Application 17/218,384 is a division of application No. 16/279,656, filed on Feb. 19, 2019, granted, now 11,049,801.
Claims priority of application No. 2018701318 (MY), filed on Mar. 30, 2018.
Prior Publication US 2021/0217689 A1, Jul. 15, 2021
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/49811 (2013.01) [H01L 21/481 (2013.01); H01L 21/4853 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/16227 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of forming an encapsulated interconnect, the method comprising:
forming an encapsulation material on a land side of a semiconductor package substrate to contact a trace on the land side, the encapsulation material having an encapsulation height;
forming a via in the encapsulation material;
depositing a vertical interconnect in the via at a terminal end of the trace, the vertical interconnect having a portion that extends beyond the encapsulation height, the vertical interconnect having a stepped right-cylindrical cross-sectional area;
drilling a first right-cylindrical via in the encapsulation material to expose the trace at a terminal end, the first right-cylindrical via having a first characteristic dimension;
drilling a second right-cylindrical via in the encapsulation material after drilling the first right-cylindrical via, the second right-cylindrical having a second characteristic dimension that is larger than the first characteristic dimension wherein the first characteristic dimension is a height of the first right-cylindrical via and the second characteristic dimension is a height of the second right-cylindrical via; and
filling the via by a process selected from electroplating and solder printing.