US 11,887,904 B2
Integrally bonded semiconductor device and power converter including the same
Daisuke Oya, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/602,634
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Jul. 11, 2019, PCT No. PCT/JP2019/027577
§ 371(c)(1), (2) Date Oct. 8, 2021,
PCT Pub. No. WO2021/005797, PCT Pub. Date Jan. 14, 2021.
Prior Publication US 2022/0165631 A1, May 26, 2022
Int. Cl. H01L 23/10 (2006.01); H01L 23/049 (2006.01); H01L 23/373 (2006.01); H02P 27/06 (2006.01); H01L 23/00 (2006.01); H01L 23/24 (2006.01)
CPC H01L 23/10 (2013.01) [H01L 23/049 (2013.01); H01L 23/3735 (2013.01); H01L 23/24 (2013.01); H01L 24/73 (2013.01); H02P 27/06 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a base plate;
an insulating substrate including a ceramic plate and a circuit pattern, the ceramic plate being integrally bonded to an upper surface of the base plate with no solder layer therebetween, the circuit pattern being disposed on an upper surface of the ceramic plate;
a semiconductor element mounted on an upper surface of the circuit pattern;
a case surrounding the insulating substrate and the semiconductor element over the base plate;
an adhesive to adhere a lower portion of the case to an outer peripheral portion of the ceramic plate; and
a sealant to seal an interior of the case, wherein
the adhesive is in contact with an outer peripheral end of the ceramic plate to an outer peripheral end of the circuit pattern.