US 11,887,903 B2
Power semiconductor device, method for manufacturing power semiconductor device, and power conversion apparatus
Tomonori Tagami, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Feb. 28, 2022, as Appl. No. 17/683,002.
Claims priority of application No. 2021-070532 (JP), filed on Apr. 19, 2021.
Prior Publication US 2022/0336301 A1, Oct. 20, 2022
Int. Cl. H01L 23/26 (2006.01); H01L 21/48 (2006.01); H01L 23/053 (2006.01); H01L 23/367 (2006.01); H01L 23/14 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/053 (2013.01) [H01L 23/14 (2013.01); H01L 23/3114 (2013.01); H01L 23/367 (2013.01); H01L 23/49838 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A power semiconductor device comprising:
a semiconductor element;
a circuit pattern mounted with the semiconductor element;
an insulating layer mounted with the circuit pattern;
a heat radiation fin mounted with the insulating layer;
a case bonded to a peripheral edge of the heat radiation fin and surrounding the semiconductor element, the circuit pattern, and the insulating layer;
a sealing resin sealed in a region surrounded by the insulating layer, the circuit pattern, and the case;
an internal electrode bonded to the semiconductor element and the circuit pattern, including a flat plate-shaped portion, and including a pair of support portions; and
an external electrode bonded to the internal electrode and integrally molded with the case.
 
10. A method for manufacturing a power semiconductor device, the method comprising the steps of:
bonding a semiconductor element to a circuit pattern mounted on a heat radiation fin with interposition of an insulating layer;
bonding the semiconductor element to an internal electrode, and bonding a support portion of the internal electrode to the circuit pattern;
bonding the heat radiation fin to a case;
bonding the internal electrode to an external electrode integrally molded with the case;
wire-bonding and connecting by wiring the semiconductor element to a control terminal integrally molded with the case with a metal wire; and
sealing with resin a region surrounded by the insulating layer, the circuit pattern, and the case.