US 11,887,896 B2
Semiconductor device and method of manufacture
Yao-Wen Hsu, New Taipei (TW); Ming-Chi Huang, Zhubei (TW); and Ying-Liang Chuang, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 13, 2022, as Appl. No. 17/838,495.
Application 17/838,495 is a continuation of application No. 16/889,160, filed on Jun. 1, 2020, granted, now 11,362,006.
Claims priority of provisional application 62/927,461, filed on Oct. 29, 2019.
Prior Publication US 2022/0319933 A1, Oct. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/823842 (2013.01) [H01L 21/28088 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 21/823821 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first gate layer over a raised semiconductor region;
forming a hard mask over the first gate layer;
applying a bottom anti-reflective layer over the hard mask, the bottom anti-reflective layer having a first diffusibility with respect to a first chemical, the bottom anti-reflective layer comprising a polymer with a chromophore group;
patterning the hard mask through the bottom anti-reflective layer;
after the patterning the hard mask, reducing the first diffusibility to a second diffusibility with respect to the first chemical, wherein the reducing the first diffusibility to the second diffusibility comprises applying either isopropyl alcohol or hexamethyldisilazane to the bottom anti-reflective layer; and
removing a portion of the first gate layer using the first chemical while the bottom anti-reflective layer is present.