US 11,887,868 B2
Substrate processing apparatus and apparatus for manufacturing integrated circuit device
Young-hoo Kim, Hwaseong-si (KR); Sang-jine Park, Suwon-si (KR); Yong-jhin Cho, Hwaseong-si (KR); Yeon-jin Gil, Daegu (KR); Ji-hoon Jeong, Suwon-si (KR); Byung-kwon Cho, Suwon-si (KR); Yong-sun Ko, Suwon-si (KR); and Kun-tack Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 29, 2021, as Appl. No. 17/215,928.
Application 17/215,928 is a continuation of application No. 15/827,144, filed on Nov. 30, 2017, granted, now 10,985,036.
Claims priority of application No. 10-2017-0071729 (KR), filed on Jun. 8, 2017.
Prior Publication US 2021/0217635 A1, Jul. 15, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/67 (2006.01); H01L 21/02 (2006.01); B08B 7/00 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/67034 (2013.01) [B08B 7/0021 (2013.01); H01L 21/6719 (2013.01); H01L 21/67126 (2013.01); H01L 21/68735 (2013.01); H01L 21/02101 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
loading the substrate into a substrate processing apparatus; and
processing the substrate by using a supercritical fluid;
wherein the substrate processing apparatus comprises:
a vessel comprising a processing space for processing the substrate, and an upper vessel and a lower vessel detachably coupled to each other;
a substrate support configured to support the substrate loaded in the processing space;
a first supply port in the upper vessel configured to supply a first supercritical fluid into the vessel;
an exhaust port in the lower vessel configured to discharge a fluid from inside the vessel; and
a barrier, between a side wall of the vessel and the substrate support, configured to surround the substrate support,
wherein a first inner surface of the upper vessel and a second inner surface of the lower vessel are configured to define the processing space,
wherein an upper end of the barrier is directly connected to the first inner surface of the upper vessel and is closed by the first inner surface of the upper vessel, and a side wall of the barrier surrounds the substrate and the substrate support,
wherein the barrier extends downward from the upper vessel to a point lower than the substrate supported by the substrate support and is configured to:
block the first supercritical fluid supplied from the first supply port from flowing directly to a contact portion between the upper vessel and the lower vessel, and cause the first supercritical fluid to flow downwardly toward a bottom portion of the second inner surface of the lower vessel; and
guide fluid flowing from the contact portion between the upper vessel and the lower vessel downward to the point lower than the substrate supported by the substrate support in a region between the side wall of the vessel and the barrier, and cause the guided flow to flow downwardly toward the bottom portion of the second inner surface of the lower vessel, and
wherein a lower portion of the barrier is shaped so as to be bent inward away from the side wall of the vessel.