US 11,887,856 B2
Enhanced spatial ALD of metals through controlled precursor mixing
Kelvin Chan, San Ramon, CA (US); Yihong Chen, San Jose, CA (US); Jared Ahmad Lee, San Jose, CA (US); Kevin Griffin, Livermore, CA (US); Srinivas Gandikota, Santa Clara, CA (US); Joseph Yudovsky, Campbell, CA (US); and Mandyam Sriram, San Jose, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 14, 2021, as Appl. No. 17/347,070.
Application 17/347,070 is a continuation of application No. 15/959,972, filed on Apr. 23, 2018, granted, now 11,043,386.
Application 15/959,972 is a continuation in part of application No. 15/494,892, filed on Apr. 24, 2017, abandoned.
Application 15/494,892 is a continuation in part of application No. 15/461,842, filed on Mar. 17, 2017, granted, now 10,985,023, issued on Apr. 20, 2021.
Application 15/461,842 is a continuation of application No. 14/965,349, filed on Dec. 10, 2015, granted, now 9,601,339, issued on Mar. 21, 2017.
Application 14/965,349 is a continuation of application No. 14/062,804, filed on Oct. 24, 2013, granted, now 9,230,815, issued on Jan. 5, 2016.
Claims priority of provisional application 62/327,091, filed on Apr. 25, 2016.
Claims priority of provisional application 61/825,983, filed on May 21, 2013.
Claims priority of provisional application 61/784,281, filed on Mar. 14, 2013.
Claims priority of provisional application 61/719,350, filed on Oct. 26, 2012.
Prior Publication US 2021/0305052 A1, Sep. 30, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/285 (2006.01); H01L 21/3205 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); C23C 16/14 (2006.01); C23C 16/452 (2006.01); C23C 16/458 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/28562 (2013.01) [C23C 16/06 (2013.01); C23C 16/14 (2013.01); C23C 16/452 (2013.01); C23C 16/4557 (2013.01); C23C 16/4584 (2013.01); C23C 16/45525 (2013.01); C23C 16/45534 (2013.01); C23C 16/45551 (2013.01); C23C 16/45563 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28506 (2013.01); H01L 21/32051 (2013.01); H01L 21/76877 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method comprising:
exposing a substrate surface to a first process condition, the first process condition comprising a constant flow of a first reactive gas and a pulsed flow of a second reactive gas, the second reactive gas pulsed so that there is less than a full amount of the second reactive gas for CVD;
purging the substrate surface of the first process condition to remove the first reactive gas and the second reactive gas; and
exposing the substrate surface to a second process condition comprising the second reactive gas.