US 11,887,855 B2
Methods for depositing fluorine/carbon-free conformal tungsten
Xinyu Fu, Pleasanton, CA (US); Srinivas Gandikota, Santa Clara, CA (US); Avgerinos V. Gelatos, Scotts Valley, CA (US); Atif Noori, Saratoga, CA (US); Mei Chang, Saratoga, CA (US); David Thompson, San Jose, CA (US); and Steve G. Ghanayem, Los Altos, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 6, 2021, as Appl. No. 17/223,506.
Application 17/223,506 is a continuation of application No. 15/461,842, filed on Mar. 17, 2017, granted, now 10,985,023, issued on Apr. 20, 2021.
Application 15/461,842 is a continuation of application No. 14/965,349, filed on Dec. 10, 2015, granted, now 9,601,339, issued on Mar. 17, 2017.
Application 14/965,349 is a continuation of application No. 14/062,804, filed on Oct. 24, 2013, granted, now 9,230,815, issued on Jan. 5, 2016.
Claims priority of provisional application 61/825,983, filed on May 21, 2013.
Claims priority of provisional application 61/784,281, filed on Mar. 14, 2013.
Claims priority of provisional application 61/719,350, filed on Oct. 26, 2012.
Prior Publication US 2021/0225655 A1, Jul. 22, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/285 (2006.01); H01L 21/768 (2006.01); C23C 16/14 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); C23C 16/06 (2006.01); H01L 21/3205 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); C23C 16/42 (2006.01)
CPC H01L 21/28562 (2013.01) [C23C 16/0272 (2013.01); C23C 16/06 (2013.01); C23C 16/14 (2013.01); C23C 16/345 (2013.01); C23C 16/42 (2013.01); C23C 16/4557 (2013.01); C23C 16/45525 (2013.01); C23C 16/45551 (2013.01); C23C 16/45553 (2013.01); C23C 16/45563 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); H01L 21/28088 (2013.01); H01L 21/28506 (2013.01); H01L 21/32051 (2013.01); H01L 21/32053 (2013.01); H01L 21/76877 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A processing method comprising sequentially exposing at least a portion of a substrate in a processing chamber to a first reactive gas comprising WxCl5x or WxCl6x and a second reactive gas comprising hydrogen radicals to form a tungsten-containing film, wherein the first reactive gas and the second reactive gas are flowed into the processing chamber at the same time.