US 11,887,854 B2
Semiconductor structure manufacturing method and two semiconductor structures
Yuan Li, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Oct. 8, 2021, as Appl. No. 17/496,927.
Application 17/496,927 is a continuation of application No. PCT/CN2021/105239, filed on Jul. 8, 2021.
Claims priority of application No. 202110049137.6 (CN), filed on Jan. 14, 2021.
Prior Publication US 2022/0223423 A1, Jul. 14, 2022
Int. Cl. H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/49 (2006.01)
CPC H01L 21/28518 (2013.01) [H01L 29/4933 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor structure manufacturing method, comprising:
providing a substrate and a silicon layer, the substrate exposing a top surface of the silicon layer;
performing deposition to form an alloy layer on the silicon layer, the deposition being performed in a nitrogen-containing atmosphere, and a concentration of nitrogen atoms in the nitrogen-containing atmosphere increasing with an increase in deposition time; and
annealing the alloy layer and the silicon layer to form a metal silicide layer.