CPC H01L 21/02576 (2013.01) [C23C 16/0218 (2013.01); C23C 16/303 (2013.01); C30B 25/165 (2013.01); C30B 25/183 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 29/207 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01)] | 18 Claims |
1. A method for depositing a nucleation layer (3) comprised of group III and V elements directly onto a surface (2) of a substrate (1) made of a group IV element, the method comprising:
introducing a first gaseous starting material containing a group III element together with a second gaseous starting material containing a group V element into a process chamber (8) containing the substrate (1) at a process temperature greater than 500° C.;
at least at a start of the deposition of the nucleation layer (3), feeding a third gaseous starting material containing a group IV element into the process chamber (8) together with the first and second gaseous starting materials; and
depositing a buffer layer (4) on the nucleation layer (3) and depositing an active layer (6) on the buffer layer (4) in such manner that a two-dimensional electron gas develops on a boundary surface (5) between the active layer (6) and the buffer layer (4),
wherein a partial pressure and/or mass flow of the third gaseous starting material in the process chamber (8) is chosen so as to result in a dopant concentration between 1×1017 and 1×1018 cm−3, and a decrease in high-frequency damping.
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