CPC H01L 21/0228 (2013.01) [C23C 16/407 (2013.01); C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); H01L 21/0234 (2013.01); H01L 21/02175 (2013.01); H01L 21/02274 (2013.01); H01L 21/0338 (2013.01)] | 24 Claims |
1. A method, comprising:
depositing a metal layer onto an organic photoresist on a substrate using an organic metal precursor during a first half of an Atomic Layer Deposition (ALD) cycle; and
exposing the substrate with the metal layer deposited onto the organic photoresist to an oxygen species during a second half of the ALD cycle to form a deposited metal oxide layer,
wherein the organic metal precursor is sufficiently reactive to seal the organic photoresist with the deposited metal oxide layer from degradation by the oxygen species within three of the ALD cycles or less.
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