CPC H01L 21/02255 (2013.01) [H01L 21/02238 (2013.01); H01L 29/66666 (2013.01)] | 5 Claims |
1. A method for producing a three-dimensional structure, comprising:
processing a surface layer of a silicon substrate to form a three-dimensional shape, the surface layer having an oxygen concentration of 1×1018 atoms/cm3 or ore; and
performing a heat treatment to form an oxide film on a surface of the three-dimensional shape to produce the three-dimensional structure, the three-dimensional structure having an oxygen concentration of 1×1017 atoms/cm3 or more and projections and recesses in a thickness direction of the silicon substrate, a height of the three-dimensional structure in the thickness direction being between 1 nm and 100 nm, wherein
the heat treatment temperature is in a range of 800° C. to 900° C.
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