US 11,887,844 B2
Solar cell and production method thereof, photovoltaic module
Zhao Wang, Zhejiang (CN); Jie Yang, Zhejiang (CN); Mengchao Shen, Zhejiang (CN); and Lipeng Wang, Zhejiang (CN)
Assigned to ZHEJIANG JINKO SOLAR CO., LTD., Haining Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed by ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed on Jul. 25, 2022, as Appl. No. 17/873,110.
Claims priority of application No. 202210656583.8 (CN), filed on Jun. 10, 2022.
Prior Publication US 2023/0402552 A1, Dec. 14, 2023
Int. Cl. H01L 31/0216 (2014.01); H01L 31/05 (2014.01); H01L 31/0312 (2006.01); H01L 31/0236 (2006.01)
CPC H01L 31/02167 (2013.01) [H01L 31/02363 (2013.01); H01L 31/03125 (2013.01); H01L 31/0508 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
an N-type substrate;
a P-type emitter formed on a first surface of the N-type substrate; and
a tunnel layer and a doped conductive layer sequentially formed over a second surface of the N-type substrate in a direction away from the N-type substrate;
wherein the P-type emitter comprises a first portion and a second portion, the first portion has first pyramid structures formed on a top surface of the first portion and the second portion has second pyramid structures formed on a top surface of the second portion;
wherein a transition surface is respectively formed on at least one edge of each first pyramid structure, the at least one edge has irregular deformation, the transition surface is joined with two adjacent inclined surfaces of the each first pyramid structure, and the transition surface is concave or convex relative to a center of the each first pyramid structure;
wherein a substructure is formed on each of top surfaces of at least a part of the first pyramid structures, and a shape of the substructure is spherical or spherical-like;
wherein edges of each second pyramid structure are straight; and
wherein a sheet resistance of the first portion ranges from 10 ohm/sq to 500 ohm/sq, a doping concentration at the top surface of the first portion ranges from 1E17 atoms/cm3 to 8E19 atoms/cm3; a sheet resistance of the second portion ranges from 100 ohm/sq to 1000 ohm/sq, and a doping concentration at the top surface of the second portion ranges from 1E16 atoms/cm3 to 5E19 atoms/cm3.