US 11,887,692 B2
Electronic device, operation method of host, operation method of memory module, and operation method of memory device
Wonjae Shin, Seoul (KR); Nam Hyung Kim, Suwon-si (KR); Dae-Jeong Kim, Seoul (KR); Do-Han Kim, Hwaseong-si (KR); Deokho Seo, Suwon-si (KR); and Insu Choi, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 26, 2021, as Appl. No. 17/535,861.
Claims priority of application No. 10-2021-0062719 (KR), filed on May 14, 2021.
Prior Publication US 2022/0366949 A1, Nov. 17, 2022
Int. Cl. G11C 7/22 (2006.01); G11C 7/10 (2006.01); G11C 8/18 (2006.01)
CPC G11C 7/222 (2013.01) [G11C 7/1009 (2013.01); G11C 7/109 (2013.01); G11C 7/1063 (2013.01); G11C 8/18 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An operation method of a memory module which includes a plurality of memory devices, the method comprising:
receiving a partial write command including a partial write enable signal and a plurality of mask signals, at a first time;
during a strobe toggle interval after the first time, receiving a first data strobe signal toggling through a first data strobe line connected with a first memory device, among the plurality of memory devices, and receiving a second data strobe signal maintained at logic high through a second data strobe line connected with a second memory device, among the plurality of memory devices; and
receiving a plurality of data through a plurality of data lines, during a data input interval after the first time.