US 11,887,684 B2
Storage device including nonvolatile memory device, operating method of storage device, and operating method of electronic device including nonvolatile memory device
Haedong No, Hwaseong-si (KR); Youjin Jeon, Yongin-si (KR); Hyeji Yun, Hwaseong-si (KR); Jongtaek Seong, Hwaseong-si (KR); Jungeol Baek, Seoul (KR); and Youn-Soo Cheon, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and KOREA UNIVERSITY Research and Business Foundation, Seoul (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 29, 2021, as Appl. No. 17/488,989.
Claims priority of application No. 10-2020-0143803 (KR), filed on Oct. 30, 2020; and application No. 10-2021-0078355 (KR), filed on Jun. 16, 2021.
Prior Publication US 2022/0139486 A1, May 5, 2022
Int. Cl. G11C 16/26 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 16/34 (2006.01); G06N 20/00 (2019.01); G11C 16/30 (2006.01); G11C 16/10 (2006.01)
CPC G11C 29/42 (2013.01) [G06N 20/00 (2019.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01); G11C 16/3495 (2013.01); G11C 29/4401 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An operating method of a storage device which includes a nonvolatile memory device and a memory controller, the method comprising:
1 sending, at the memory controller, a first read command and first offset information to the nonvolatile memory device;
2 performing, at the nonvolatile memory device, first read operations based on the first read command and the first offset information;
3 sending, at the nonvolatile memory device, a result of the first read operations as first data to the memory controller;
4 sending, at the memory controller, a second read command, read voltage levels, and second offset information to the nonvolatile memory device;
5 performing, at the nonvolatile memory device, second read operations based on the second read command, the read voltage levels, and the second offset information;
6 sending, at the nonvolatile memory device, results of the second read operations as second data to the memory controller; and
7 predicting the second set information, based on the result of the first read operations and a machine learning-based offset prediction module included in the memory controller.