US 11,887,672 B2
Nonvolatile memory device having a dummy bit line driver and operation method thereof
Myeong-Woo Lee, Hwaseong-si (KR); Seungyeon Kim, Seoul (KR); Dongha Shin, Hwaseong-si (KR); and Beakhyung Cho, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 11, 2022, as Appl. No. 17/693,013.
Claims priority of application No. 10-2021-0034202 (KR), filed on Mar. 16, 2021.
Prior Publication US 2022/0301633 A1, Sep. 22, 2022
Int. Cl. G11C 16/16 (2006.01); G11C 16/24 (2006.01); G11C 16/30 (2006.01); G11C 16/28 (2006.01); G11C 7/10 (2006.01)
CPC G11C 16/16 (2013.01) [G11C 7/1039 (2013.01); G11C 16/24 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A nonvolatile memory device comprising:
a plurality of bit lines connected with a plurality of cell strings;
a common source line connected with the plurality of cell strings;
at least one dummy bit line provided between the common source line and the plurality of bit lines;
a control logic circuit configured to generate at least one dummy bit line driving signal in response to a command from an external device; and
a dummy bit line driver configured to selectively provide a first voltage to the at least one dummy bit line in response to the at least one dummy bit line driving signal, wherein the dummy bit line driver includes:
a first switch connected between the at least one dummy bit line and a first terminal receiving the first voltage and configured to operate in response to a first dummy bit line driving signal of the at least one dummy bit line driving signal; and
a second switch connected between the at least one dummy bit line and the common source line and configured to operate in response to a second dummy bit line driving signal of the at least one dummy bit line driving signal.