US 11,887,669 B2
Apparatus and method for programming data in a non-volatile memory device
Hyung Jin Choi, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Feb. 11, 2022, as Appl. No. 17/669,972.
Claims priority of application No. 10-2021-0119093 (KR), filed on Sep. 7, 2021.
Prior Publication US 2023/0077184 A1, Mar. 9, 2023
Int. Cl. G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01)
CPC G11C 16/10 (2013.01) [G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/3459 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a cell group including plural non-volatile memory cells capable of storing data; and
a control circuit configured to perform a program operation for programming data in the plural non-volatile memory cells through a plurality of program loops, each program loop including a unit program operation for applying a program pulse to the plural non-volatile memory cells and a verification operation for verifying a result of the unit program operation, use a current detection circuit for detecting whether a threshold voltage distribution of the plural non-volatile memory cells satisfies a reference in a specific program loop of the plurality of program loops, and terminate the program operation after applying a preset program pulse to the plural non-volatile memory cells in a next program loop following the specific program loop.