US 11,887,537 B2
Driving circuit of active-matrix organic light-emitting diode with hybrid transistors
Lien-Hsiang Chen, Miao-Li County (TW); Kung-Chen Kuo, Miao-Li County (TW); Ming-Chun Tseng, Miao-Li County (TW); Cheng-Hsu Chou, Miao-Li County (TW); and Kuan-Feng Lee, Miao-Li County (TW)
Assigned to INNOLUX CORPORATION, Miao-Li County (TW)
Filed by InnoLux Corporation, Miao-Li County (TW)
Filed on Aug. 10, 2022, as Appl. No. 17/884,701.
Application 16/411,620 is a division of application No. 15/364,350, filed on Nov. 30, 2016, granted, now 10,332,446, issued on Jun. 25, 2019.
Application 17/884,701 is a continuation of application No. 17/131,881, filed on Dec. 23, 2020, granted, now 11,450,273.
Application 17/131,881 is a continuation of application No. 16/411,620, filed on May 14, 2019, granted, now 10,902,775, issued on Jan. 26, 2021.
Claims priority of provisional application 62/387,213, filed on Dec. 24, 2015.
Claims priority of provisional application 62/262,430, filed on Dec. 3, 2015.
Claims priority of application No. 105115144 (TW), filed on May 17, 2016.
Prior Publication US 2022/0383818 A1, Dec. 1, 2022
Int. Cl. G09G 3/3233 (2016.01); H01L 27/12 (2006.01); H10K 59/121 (2023.01)
CPC G09G 3/3233 (2013.01) [H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H10K 59/1213 (2023.02); G09G 2300/043 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0809 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/045 (2013.01); G09G 2330/021 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A driving circuit, comprising:
a first transistor having a first terminal connected to a first voltage level, a second terminal and a third terminal;
a second transistor having a first terminal connected to the second terminal of the first transistor, a second terminal connected to a second voltage level, and a third terminal connected to the third terminal of the first transistor; and
a third transistor having a first terminal connected to the first terminal of the second transistor,
wherein the first transistor and the second transistor are low temperature poly-silicon transistors, and the third transistor is an oxide semiconductor transistor;
wherein a voltage value of the first voltage level is greater than a voltage value of the second voltage level.