US 11,886,741 B2
Method and storage device for improving NAND flash memory performance for intensive read workloads
Tushar Tukaram Patil, Suwon-si (KR); Anantha Sharma, Suwon-si (KR); and Sharath Kumar Kodase, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 27, 2021, as Appl. No. 17/459,539.
Claims priority of application No. 202141017782 (IN), filed on Apr. 16, 2021.
Prior Publication US 2022/0334768 A1, Oct. 20, 2022
Int. Cl. G06F 3/06 (2006.01); G06F 11/10 (2006.01); G06F 12/10 (2016.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0611 (2013.01); G06F 3/0631 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 11/1004 (2013.01); G06F 12/10 (2013.01); G06F 2212/657 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for reading data in a storage device, the method comprising:
receiving, by the storage device, a read command from a host device, wherein the read command comprises a Logical Block Address (LBA) of stored data to be read;
obtaining, by the storage device, a Physical Block Number (PBN) based on the LBA and a Logical to Physical (L2P) mapping;
determining, by the storage device, whether the PBN is a block of a volatile memory of the storage device;
reading, by the storage device, the stored data directly from the volatile memory based on the PBN being a block of the volatile memory;
incrementing, by the storage device, a read counter associated with the PBN based on the stored data being read directly from the volatile memory;
reading, by the storage device, the stored data from a non-volatile memory of the storage device based on the PBN not being a block of the volatile memory; and
determining, by the storage device, whether a read disturbance exceeds a threshold limit and whether the read counter exceeds a maximum read limit while the stored data is read from the non-volatile memory.