US 11,886,736 B2
Memory access threshold based memory management
Guang Hu, Mountain View, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 14, 2022, as Appl. No. 17/966,391.
Application 17/966,391 is a continuation of application No. 17/234,227, filed on Apr. 19, 2021, granted, now 11,500,578.
Prior Publication US 2023/0040062 A1, Feb. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, causes the processing device to:
compare respective memory access counts of blocks of non-volatile memory cells that are grouped into respective groups to different respective memory access thresholds of the respective groups, wherein each respective group has a different respective memory access threshold, and wherein the different respective memory access thresholds are each incrementally different by a fixed value that is equal to a total number of pages in a block of non-volatile memory cells in the blocks of non-volatile memory cells;
determine a respective memory access count of a block of non-volatile memory cells exceeds a respective memory access threshold of a respective group in which the block of non-volatile memory cells is grouped; and
perform a media scan operation on the block of non-volatile memory cells.