US 11,886,728 B2
Undo capability for memory devices
Tony M. Brewer, Plano, TX (US); David Boles, Austin, TX (US); and David Andrew Roberts, Wellesley, MA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 9, 2022, as Appl. No. 17/836,529.
Claims priority of provisional application 63/234,929, filed on Aug. 19, 2021.
Claims priority of provisional application 63/233,051, filed on Aug. 13, 2021.
Prior Publication US 2023/0060587 A1, Mar. 2, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/064 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0631 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A method comprising:
receiving, from an application, an indication of a start of an undo logging operation, the indication of the start of the undo logging operation identifying a first physical memory block of a memory device, the first physical memory block addressed by one or more memory lines;
responsive to receiving, from the application, the indication of the start of the undo logging operation:
receiving a write request for a memory address range assigned to the first physical memory block of the memory device;
responsive to the write request:
allocating a second physical memory block of the memory device;
updating at least one bit of a metadata data structure for the memory address range from indicating that memory requests are to be serviced at the first physical memory block to indicate that memory requests are to be serviced at the second physical memory block; and
servicing the memory request for the memory address range using the second physical memory block; and
determining that the undo logging operation failed; and
responsive to determining that the undo logging operation failed, updating the at least one bit of the metadata data structure for the memory line from indicating that memory requests are to be serviced at the second physical memory block to indicate that memory requests are to be serviced at the first physical memory block.