US 11,886,331 B2
Memory sub-system codeword addressing
Reshmi Basu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 15, 2023, as Appl. No. 18/110,040.
Application 18/110,040 is a continuation of application No. 17/007,006, filed on Aug. 31, 2020, granted, now 11,604,725.
Prior Publication US 2023/0289283 A1, Sep. 14, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 12/02 (2006.01)
CPC G06F 12/0223 (2013.01) 20 Claims
OG exemplary drawing
 
1. A method, comprising:
writing first data to a first set of contiguous partitions in a first access row of a memory device;
writing a first portion of second data to a second set of contiguous partitions in the first access row of the memory device, wherein:
a null partition is provided between the first set of contiguous partitions and the second set of contiguous partitions such that a last partition in the first set of contiguous partitions is physically adjacent to the null partition and a first partition in the second set of contiguous partitions is physically adjacent to the null partition; and
writing a second portion of the second data to a first set of contiguous partitions in a second access row of the memory device.