US 11,886,313 B2
Temperature assisted NAND flash management
Gang Zhao, Chandler, AZ (US); Lin Chen, Cupertino, CA (US); Wei Jiang, Fremont, CA (US); Jie Chen, Milpitas, CA (US); and Tao Wei, Shanghai (CN)
Assigned to Innogrit Technologies Co., Ltd., Shanghai (CN)
Filed by Innogrit Technologies Co., Ltd., Shanghai (CN)
Filed on Sep. 21, 2020, as Appl. No. 17/026,603.
Prior Publication US 2022/0091954 A1, Mar. 24, 2022
Int. Cl. G06F 11/30 (2006.01); G06F 11/07 (2006.01); G11C 7/04 (2006.01); G11C 7/14 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01)
CPC G06F 11/3037 (2013.01) [G06F 11/076 (2013.01); G06F 11/3058 (2013.01); G11C 7/04 (2013.01); G11C 7/14 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01); G11C 16/349 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
obtaining a read-out from a temperature sensor in a non-volatile storage system;
generating a predicted real-time on-die temperature for a non-volatile storage device in the storage system based on the read-out;
generating an estimated threshold voltage for reading data stored in the non-volatile storage device based on the predicted real-time on-die temperature; and
conducting a local sweep of a reference voltage using the estimated threshold voltage as a starting point to obtain a final read reference voltage with a minimum read bit error rate.