CPC G03F 7/36 (2013.01) [C23C 14/04 (2013.01); C23C 14/06 (2013.01); C23C 14/5873 (2013.01); B81C 2201/0146 (2013.01)] | 20 Claims |
1. A method, comprising:
providing a substrate including a carbonaceous material, the substrate having a first thermal conductivity;
depositing a first masking layer having a second thermal conductivity on at least a portion of the substrate, a ratio of the second thermal conductivity to the first thermal conductivity being less than or equal to 1:30;
depositing a second masking layer in direct contact with the first masking layer to form an etch mask; and
etching an exposed portion of the substrate using the etch mask that includes both the first masking layer and the second masking layer.
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11. An etched substrate formed by the process comprising the steps of:
providing a substrate including a carbonaceous material, the substrate having a first thermal conductivity;
depositing a first masking layer having a second thermal conductivity on at least a portion of the substrate, a ratio of the second thermal conductivity to the first thermal conductivity being less than or equal to 1:30;
depositing a second masking layer in direct contact with the first masking layer to form an etch mask; and
etching an exposed portion of the substrates;
wherein the first masking layer has a first thickness and the second masking layer has a second thickness, and a ratio of the first thickness to the second thickness has a minimum value of about 1/30.
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