US 11,886,121 B2
Method for forming patterned photoresist
Chun-Chih Ho, Taichung (TW); Ching-Yu Chang, Yilan County (TW); and Chin-Hsiang Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on May 27, 2020, as Appl. No. 16/885,077.
Claims priority of provisional application 62/894,367, filed on Aug. 30, 2019.
Prior Publication US 2021/0063888 A1, Mar. 4, 2021
Int. Cl. G03F 7/36 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/36 (2013.01) [H01L 21/0274 (2013.01)] 20 Claims
 
1. A method, comprising:
coating a photoresist layer on a substrate;
performing an exposure process to the photoresist layer such that the photoresist layer comprises an exposed portion;
performing a developing process to remove the exposed portion to form a patterned photoresist on the substrate;
after performing the developing process, forming a molding layer covering the patterned photoresist;
reflowing the patterned photoresist in the molding layer; and
removing the molding layer from the reflowed patterned photoresist, wherein the reflowing the patterned photoresist comprises:
heating the patterned photoresist at a temperature greater than a glass transition temperature of the patterned photoresist.