US 11,886,120 B2
Deposition of semiconductor integration films
Lakmal Charidu Kalutarage, San Jose, CA (US); Mark Joseph Saly, Milpitas, CA (US); Bhaskar Jyoti Bhuyan, Milpitas, CA (US); Thomas Joseph Knisley, Livonia, MI (US); Kelvin Chan, San Ramon, CA (US); Regina Germanie Freed, Los Altos, CA (US); David Michael Thompson, San Jose, CA (US); Susmit Singha Roy, Sunnyvale, CA (US); and Madhur Sachan, Belmont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc, Santa Clara, CA (US)
Filed on Jun. 23, 2021, as Appl. No. 17/356,304.
Application 17/356,304 is a continuation in part of application No. 16/934,730, filed on Jul. 21, 2020, granted, now 11,562,904.
Prior Publication US 2022/0026807 A1, Jan. 27, 2022
Int. Cl. G03F 7/16 (2006.01); G03F 7/004 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/167 (2013.01) [C23C 16/40 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); C23C 16/50 (2013.01); G03F 7/0043 (2013.01); G03F 7/168 (2013.01); H01L 21/0274 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a photoresist layer over a substrate, comprising:
forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, wherein a flowrate of the first metal precursor vapor and the first oxidant vapor is non-uniform across a surface of the substrate; and
forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor, wherein a flowrate of the second metal precursor vapor and the second oxidant vapor is non-uniform across the surface of the substrate, and wherein the second oxidant vapor is different than the first oxidant vapor.